New gate driver from littelfuse to simplify SiC and IGBT designs

By Setform

The new gate driver is designed to meet the demands of SiC MOSFET and IGBT control in EV powertrain and DC-DC converter applications

Littelfuse, a diversified industrial technology manufacturing company, has released the ​IX4352NEAU automotive-qualified low-side gate driver, designed to meet the demands of SiC MOSFET and IGBT control in EV powertrain and DC-DC converter applications

The IX4352NEAU is an AEC-Q100-qualified low-side gate driver offering an integrated, adjustable negative gate-drive bias, preventing any need for an external voltage rail or DC-DC converters, which are typically needed to suppress parasitic turn-on of high-speed power devices. This capability enables the simplification of gate driver design, improves switching performance, and decreases the system's total cost.

June Zhang, product manager, Integrated Circuits Division at Littelfuse, said, “By integrating the IX4352NEAU in their latest designs, our customers can develop safer, more compact, and more efficient power systems. This helps accelerate their time to market, while reducing total system cost in the growing markets of automotive DC-DC converters and automotive drivetrains.”

Features include:

  • Adjustable negative drive bias, down to -10V, to enhance dv/dt immunity, suppress parasitic turn-on, and ensure faster turn-off of SiC MOSFETs and IGBTs.
  • 9 A peak source and sink drive capability to enable tailored turn-on and turn-off timing.
  • Integrated protections include DESAT detection, active soft shutdown, UVLO, TSD, and fault output.
  • 3.3V TTL/CMOS-compatible inputs tolerant to up to 7V.
  • AEC-Q100 qualified and thermally robust.

The markets and applications include automotive DC-DC converters, EV drivetrains, EV inverters and motor drives, and switching power supplies.

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