The new X4-Class device can simplify thermal design and increase efficiency
Littelfuse, an industrial technology manufacturing company, has released the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200V, 480A N-channel MOSFET has a low on-state resistance (RDS(on)) of 1.99mΩ, allowing for improved conduction efficiency, simplified thermal management, and enhanced system reliability in power-dense designs
The MMIX1T500N20X4 uses a high-performance, ceramic-based, isolated SMPD-X package with topside cooling for optimal thermal management. Compared with X4-Class MOSFET solutions, the device offers up to 2x higher current ratings and 63% lower RDS(on), allowing engineers to consolidate numerous low-current devices into a single high-current solution.
Features and benefits include:
- 200V blocking voltage, ultra-low RDS(on) of 1.99mΩ for reduced conduction losses
- High current capability (ID = 480A) decreases the number of parallel devices needed
- Compact SMPD-X isolated package with 2500V isolation and improved thermal resistance (Rth(j-c) = 0.14°C/W)
- A low gate charge (Qg = 535nC) reduces gate-drive power requirements
- Streamlined thermal management with topside-cooled packaging
The MMIX1T500N20X4 is suited for:
- Battery energy storage systems
- Industrial and process power supplies
- DC load switches
- Industrial charging infrastructure
- Drones and vertical take-off and landing platforms
Antonio Quijano, product marketing analyst at Littelfuse, said, “The new devices enable designers to consolidate multiple paralleled low-current devices into a single high-current device, simplifying the design and reducing component count. This enhances system reliability, streamlines gate driver implementation, and increases both power density and PCB area efficiency.”
