Toshiba Electronics Europe has introduced the XPJ1R504PB, an automotive-compliant 40V, 120A N-channel power MOSFET in the S-TOGL package, expanding its lineup for 12V systems. Target applications include inverters, semiconductor relays, load switches, and motor drives
The advancement of electrification in automotive equipment has expanded the adoption of inverters and motor drives, driving higher output and efficiency. To address these trends, MOSFETs must provide low power loss and high heat dissipation. The XPJ1R504PB, featuring the S-TOGL package, facilitates compact, high-density mounting and excellent thermal performance, reducing the size of automotive equipment and improving efficiency.
As this automotive equipment operates in a wide range of temperature conditions, the reliability of the solder joints is vital. The S-TOGL package employs gull-wing leads to relieve mounting stress and improve the mechanical reliability of the soldered connections.
Additionally, the package features a post-less structure that integrates the chip’s source-electrode connection and outer leads, reducing parasitic resistance and achieving an on-resistance (RDS(ON)) of 1.54Ω (max.) at a gate-source voltage (VGS) of 10V.
Using a thick copper frame in the S-TOGL package lowers the transient thermal impedance between the channel and the case to 0.76°C/W, reducing conduction loss, suppressing heat generation, and enhancing overall system efficiency. Additionally, a multi-pin structure for the source leads improves current distribution, enabling high current capability.
Toshiba will continue to develop automotive MOSFET products suited to various applications and system requirements, thereby contributing to higher efficiency.
