Featuring the latest-generation U-MOS11-H process
Toshiba Electronics Europe has launched the TPHR6704RL, a 40V N-channel power MOSFET created using its latest-generation U-MOS11-H process. The device is optimised for switched-mode power supplies used in data centres and industrial equipment, including high-efficiency DC-DC converters, motor drivers, and switching voltage regulators
Adopting the U-MOS11-H process enables the TPHR6704RL to achieve a typical drain-source on-resistance (RDS(ON)) of 0.52mΩ at a gate-source voltage (VGS) of 10V, and a maximum RDS(ON) of 0.67mΩ at a VGS of 10V. Compared to the existing 40V product manufactured using the U-MOS IX-H process, the RDS(ON) is 21% lower.
The switching performance of the new device also improves, with a typical gate charge (Qg) of 88nC and a gate switch charge (QSW) of 24nC, reducing the RDS(ON) x Qg figure of merit by 37%, enabling low-loss operation.
TPHR6704RL has been developed to help designers reduce EMI in switched-mode power supplies by minimising voltage spikes generated between the drain and source during switching.
The TPHR6704RL also provides robust current and thermal performance, with a drain current (ID) rating up to 420A and a channel-to-case thermal resistance of 0.71°C/W at 25°C, facilitating stable operation under high-load conditions. The device can operate over a wide temperature range, with a maximum channel temperature of 175°C.
Housed in the SOP Advance (N) package, the device has high footprint compatibility with existing SOP Advance designs, simplifying board-level upgrades and replacement.
Toshiba has a comprehensive set of circuit design tools to support efficient power supply design. As well as the G0 Spice model for rapid functional verification, G2 Spice models are also available to accurately reproduce transient and switching characteristics, helping to optimise efficiency, EMI, and thermal performance.
