Semiconductor manufacturer Diodes Incorporated has launches a new family of automotive-compliant field-plated Super Barrier Rectifier (SBRFP) products.
The 2A SBRFP2M60P1Q and SBRFP2M60SAFQ, 3A SBRFP3M60SAFQ, and 8A SBRFP8A60P5Q are engineered to serve as drop-in replacements for comparable Schottky and PN junction diodes.
The new SBRFP devices feature industry-leading ultra-low forward voltage (VF) and low reverse leakage current (IR). This combination enables the design of more efficient and reliable DC-DC converters, reverse-polarity protection (RPP), battery charging systems, automotive LED lighting, and transmission control systems.
Diodes’ proprietary and patented SBRFP technology employs a metal oxide semiconductor (MOS) manufacturing process that overcomes the limitations of Schottky and PN junction diodes.
The SBRFP8A60P5Q delivers the industry’s lowest maximum forward voltage of 0.55V at 8A, reducing conduction losses and enabling cooler operation in high-current applications. Meanwhile, the SBRFP2M60P1Q and SBRFP3M60SAFQ provide industry-leading IR leakage performance, with maximum currents of 12µA and 7µA, at 25°C and 125°C. These characteristics help improve efficiency while minimising the risk of thermal runaway under high-temperature operating conditions.
Depending on the device, avalanche energy ratings reach up to 145mJ, enabling the rectifiers to withstand surge events, load dumps, and transient conditions commonly encountered in automotive electrical systems. This avalanche capability is five to ten times greater than conventional Schottky rectifiers, improving overall system robustness and reliability.
The SBRFP family is available in various packages, including PowerDI123 (SBRFP2M60P1Q), PowerDI5 (SBRFP8A60P5Q), and SMAF (SBRFP2M60SAFQ and SBRFP3M60SAFQ).
The devices maintain stable operation across a junction temperature range of -55°C to +175°C, making them suitable for harsh automotive environments.
